Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N-2, O-2 plasmas
DC Field | Value | Language |
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dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Kang, Sungchil | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.contributor.author | Choi, Won Seok | - |
dc.date.accessioned | 2021-09-07T06:27:14Z | - |
dc.date.available | 2021-09-07T06:27:14Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-11 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111184 | - |
dc.description.abstract | Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N-2, and HBr-O-2 inductively-coupled plasmas were studied using a combination of experimental and modeling methods. The etch rates of SiC thin films were measured as functions of the additive gas fraction in the range of 0-100% for Ar, N-2, and O-2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using Langmuir probe diagnostics and a global (zero-dimensional) plasma model. The good agreement between the behaviors of the SiC etch rate and the H atom flux could suggest that a chemical etch pathway is rather controlled by the gasification of carbon through the CHx or CHxBry compounds. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3655561] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | SILICON-CARBIDE | - |
dc.subject | POWER | - |
dc.subject | DEVICES | - |
dc.subject | MODEL | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | CHEMISTRIES | - |
dc.subject | POLYSILICON | - |
dc.subject | PARAMETERS | - |
dc.subject | KINETICS | - |
dc.title | Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N-2, O-2 plasmas | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1116/1.3655561 | - |
dc.identifier.scopusid | 2-s2.0-84255200506 | - |
dc.identifier.wosid | 000296663300003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.29, no.6 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 29 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | CHEMISTRIES | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordAuthor | etching | - |
dc.subject.keywordAuthor | Langmuir probes | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | silicon compounds | - |
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