Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N-2, O-2 plasmas
- Authors
- Efremov, Alexander; Kang, Sungchil; Kwon, Kwang-Ho; Choi, Won Seok
- Issue Date
- 11월-2011
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- etching; Langmuir probes; semiconductor thin films; silicon compounds
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.29, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 29
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111184
- DOI
- 10.1116/1.3655561
- ISSN
- 0734-2101
- Abstract
- Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N-2, and HBr-O-2 inductively-coupled plasmas were studied using a combination of experimental and modeling methods. The etch rates of SiC thin films were measured as functions of the additive gas fraction in the range of 0-100% for Ar, N-2, and O-2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using Langmuir probe diagnostics and a global (zero-dimensional) plasma model. The good agreement between the behaviors of the SiC etch rate and the H atom flux could suggest that a chemical etch pathway is rather controlled by the gasification of carbon through the CHx or CHxBry compounds. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3655561]
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Collections - Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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