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Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors

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dc.contributor.authorKim, D. H.-
dc.contributor.authorLee, J. K.-
dc.contributor.authorHuh, J. H.-
dc.contributor.authorKim, Y. H.-
dc.contributor.authorKim, G. T.-
dc.contributor.authorRoth, S.-
dc.contributor.authorDettlaff-Weglikowska, U.-
dc.date.accessioned2021-09-07T06:35:17Z-
dc.date.available2021-09-07T06:35:17Z-
dc.date.created2021-06-19-
dc.date.issued2011-11-
dc.identifier.issn0370-1972-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/111229-
dc.description.abstractWe report on SOCl2 doping of separated single-walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p-type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p-type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-BLACKWELL-
dc.subjectNETWORKS-
dc.titleEffect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, D. H.-
dc.contributor.affiliatedAuthorLee, J. K.-
dc.contributor.affiliatedAuthorHuh, J. H.-
dc.contributor.affiliatedAuthorKim, G. T.-
dc.contributor.affiliatedAuthorRoth, S.-
dc.contributor.affiliatedAuthorDettlaff-Weglikowska, U.-
dc.identifier.doi10.1002/pssb.201100106-
dc.identifier.scopusid2-s2.0-84868632704-
dc.identifier.wosid000297517100056-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.248, no.11, pp.2668 - 2671-
dc.relation.isPartOfPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS-
dc.citation.titlePHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS-
dc.citation.volume248-
dc.citation.number11-
dc.citation.startPage2668-
dc.citation.endPage2671-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusNETWORKS-
dc.subject.keywordAuthordoping-
dc.subject.keywordAuthorp-type-
dc.subject.keywordAuthorSOCl2-
dc.subject.keywordAuthorSWCNTs-
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공과대학 (전기전자공학부)
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