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Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors

Authors
Kim, D. H.Lee, J. K.Huh, J. H.Kim, Y. H.Kim, G. T.Roth, S.Dettlaff-Weglikowska, U.
Issue Date
11월-2011
Publisher
WILEY-BLACKWELL
Keywords
doping; p-type; SOCl2; SWCNTs
Citation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.248, no.11, pp.2668 - 2671
Indexed
SCIE
SCOPUS
Journal Title
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume
248
Number
11
Start Page
2668
End Page
2671
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/111229
DOI
10.1002/pssb.201100106
ISSN
0370-1972
Abstract
We report on SOCl2 doping of separated single-walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p-type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p-type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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공과대학 (전기전자공학부)
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