Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires
- Authors
- Mastro, Michael A.; Kim, Hong-Youl; Ahn, Jaehui; Simpkins, Blake; Pehrsson, Pehr; Kim, Jihyun; Hite, Jennifer K.; Eddy, Charles R., Jr.
- Issue Date
- 10월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gallium nitride; nanowires (NWs); semiconductor nanostructures
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3401 - 3406
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 58
- Number
- 10
- Start Page
- 3401
- End Page
- 3406
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111540
- DOI
- 10.1109/TED.2011.2162108
- ISSN
- 0018-9383
- Abstract
- An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.