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Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

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dc.contributor.authorChang, Seo Hyoung-
dc.contributor.authorLee, Shin Buhm-
dc.contributor.authorJeon, Dae Young-
dc.contributor.authorPark, So Jung-
dc.contributor.authorKim, Gyu Tae-
dc.contributor.authorYang, Sang Mo-
dc.contributor.authorChae, Seung Chul-
dc.contributor.authorYoo, Hyang Keun-
dc.contributor.authorKang, Bo Soo-
dc.contributor.authorLee, Myoung-Jae-
dc.contributor.authorNoh, Tae Won-
dc.date.accessioned2021-09-07T08:25:24Z-
dc.date.available2021-09-07T08:25:24Z-
dc.date.created2021-06-18-
dc.date.issued2011-09-15-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/111588-
dc.description.abstractA TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectNONVOLATILE-
dc.subjectSWITCHES-
dc.subjectDIODE-
dc.titleOxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Gyu Tae-
dc.identifier.doi10.1002/adma.201102395-
dc.identifier.scopusid2-s2.0-80052519585-
dc.identifier.wosid000295228000007-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.23, no.35, pp.4063 - +-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume23-
dc.citation.number35-
dc.citation.startPage4063-
dc.citation.endPage+-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusNONVOLATILE-
dc.subject.keywordPlusSWITCHES-
dc.subject.keywordPlusDIODE-
dc.subject.keywordAuthorcrossbar architecture-
dc.subject.keywordAuthornanodevices-
dc.subject.keywordAuthorresistance switching-
dc.subject.keywordAuthorsneak path problem-
dc.subject.keywordAuthortitanium dioxide-
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