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Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

Authors
Chang, Seo HyoungLee, Shin BuhmJeon, Dae YoungPark, So JungKim, Gyu TaeYang, Sang MoChae, Seung ChulYoo, Hyang KeunKang, Bo SooLee, Myoung-JaeNoh, Tae Won
Issue Date
15-9월-2011
Publisher
WILEY-V C H VERLAG GMBH
Keywords
crossbar architecture; nanodevices; resistance switching; sneak path problem; titanium dioxide
Citation
ADVANCED MATERIALS, v.23, no.35, pp.4063 - +
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED MATERIALS
Volume
23
Number
35
Start Page
4063
End Page
+
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/111588
DOI
10.1002/adma.201102395
ISSN
0935-9648
Abstract
A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
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공과대학 (전기전자공학부)
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