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In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
- Authors
- Choi, Sang-Jun; Park, Gyeong-Su; Kim, Ki-Hong; Cho, Soohaeng; Yang, Woo-Young; Li, Xiang-Shu; Moon, Jung-Hwan; Lee, Kyung-Jin; Kim, Kinam
- Issue Date
- 2-Aug-2011
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- filament model; mutlilevel resistance state; RE-RAM; resistive switching effect; solid electrolyte resistive switching memory
- Citation
- ADVANCED MATERIALS, v.23, no.29, pp.3272 - +
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 23
- Number
- 29
- Start Page
- 3272
- End Page
- +
- ISSN
- 0935-9648
- Abstract
- Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism still is incomplete. Here, in situ TEM observations of voltage-induced changes in the microstructure of a solid electrolyte memory are reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.
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