HfO2 etching mechanism in inductively-coupled Cl-2/Ar plasma
DC Field | Value | Language |
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dc.contributor.author | Kim, Moonkeun | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Lee, Hyun Woo | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.contributor.author | Hong, MunPyo | - |
dc.contributor.author | Min, Nam Ki | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-07T09:42:28Z | - |
dc.date.available | 2021-09-07T09:42:28Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-08-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111825 | - |
dc.description.abstract | Etching characteristics and the mechanism of HfO2 thin films in Cl-2/Ar inductively-coupled plasma were investigated. The etch rate of HfO2 was measured as a function of the Cl-2/Ar mixing ratio in the range of 0 to 100% Ar at a fixed gas pressure (6 mTorr), input power (700W), and bias power (300W). We found that an increase in the Ar mixing ratio resulted in a monotonic decrease in the HfO2 etch rate in the range of 10.3 to 0.7 nm/min while the etch rate of the photoresist increased from 152.1 to 375.0 nm/min for 0 to 100% Ar. To examine the etching mechanism of HfO2 films, we combined plasma diagnostics using Langmuir probes and quadrupole mass spectrometry with global (zero-dimensional) plasma modeling. We found that the HfO2 etching process was not controlled by ion-surface interaction kinetics and formally corresponds to the reaction rate-limited etch regime. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | ZRO2 THIN-FILMS | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | GLOBAL-MODEL | - |
dc.subject | SI | - |
dc.subject | KINETICS | - |
dc.subject | O-2 | - |
dc.subject | AR | - |
dc.title | HfO2 etching mechanism in inductively-coupled Cl-2/Ar plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, MunPyo | - |
dc.contributor.affiliatedAuthor | Min, Nam Ki | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1016/j.tsf.2011.04.059 | - |
dc.identifier.wosid | 000294790900016 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.519, no.20, pp.6708 - 6711 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 519 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 6708 | - |
dc.citation.endPage | 6711 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ZRO2 THIN-FILMS | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | GLOBAL-MODEL | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | O-2 | - |
dc.subject.keywordPlus | AR | - |
dc.subject.keywordAuthor | Etch rate | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | Etch mechanism | - |
dc.subject.keywordAuthor | Plasma modeling | - |
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