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Characteristics of multilevel bipolar resistive switching in Au/ZnO/ITO devices on glass
- Authors
- Han, Yong; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 8월-2011
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ReRAM; Resistive switching; ZnO; Multilevel
- Citation
- MICROELECTRONIC ENGINEERING, v.88, no.8, pp.2608 - 2610
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 88
- Number
- 8
- Start Page
- 2608
- End Page
- 2610
- ISSN
- 0167-9317
- Abstract
- In this study, we characterize multilevel bipolar switching in devices composed of Au/ZnO/ITO constructed on glass. The ratio of the measured resistance in the low-resistance state (LRS) to that in the high-resistance state (HRS) depends on the starting sweep voltage. The HRS/LRS ratio increases from 10 to 10(4) as the starting sweep voltage changes from -1 to -3.5 V. Moreover, the Au/ZnO/ITO devices can complete more than 10(2) cycles and maintain their characteristics for up to 10 years. A more detailed description on the multilevel bipolar switching of our devices will be given in this paper. (C) 2011 Elsevier B.V. All rights reserved.
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