Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

Abstract

Electrical contacts between the nanomaterial and metal electrodes are of crucial importance both from fundamental and practical points of view. We have systematically compared the influence of contact properties by dc and EIS (Electrochemical impedance spectroscopy) techniques at various temperatures and environmental atmospheres (N-2 and 1% O-2). Electrical behaviors are sensitive to the variation of Schottky barriers, while the activation energy (E-a) depends on the donor states in the nanowire rather than on the Schottky contact. Equivalent circuits in terms of dc and EIS analyses could be modeled by Schottky diodes connected with a series resistance and parallel RC circuits, respectively. These results can facilitate the electrical analysis for evaluating the nanowire electronic devices with Schottky contacts.