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Implicit Continuous Current-Voltage Model for Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Including Interface Traps
- Authors
- Yu, Yun Seop; Cho, Namki; Hwang, Sung Woo; Ahn, Doyeol
- Issue Date
- 8월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Interface trap; SPICE; surrounding-gate metal-oxide-semiconductor field-effect transistor (SGMOSFET)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.8, pp.2520 - 2524
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 58
- Number
- 8
- Start Page
- 2520
- End Page
- 2524
- ISSN
- 0018-9383
- Abstract
- An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numerical simulations and analytic calculations showed that the proposed model is valid for all operating regions of SGMOSFETs including different interface-trap charges with several dimensions and doping densities.
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