Improved device performance in nonpolar a-plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact
- Authors
- Kim, Dong Ho; Kim, Su Jin; Kim, Seung Hwan; Jeong, Tak; Hwang, Sung Min; Kim, Tae Geun
- Issue Date
- 8월-2011
- Publisher
- WILEY-BLACKWELL
- Keywords
- nonpolar GaN; LED; Ni-Al alloys; current injection
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.5, no.8, pp.274 - 276
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
- Volume
- 5
- Number
- 8
- Start Page
- 274
- End Page
- 276
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111921
- DOI
- 10.1002/pssr.201105265
- ISSN
- 1862-6254
- Abstract
- The authors report upon the increased light-output power (P(out)) via a reduction in the forward voltage (V(f)) for nonpolar a-plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 x 10 (5) whereas that of a typical Ti/Al/Ni/Au contact is 6.8 x 10(-4) cm(2), after annealing at 700 degrees C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V(f) of the nonpolar LEDs decreases by 10% and P(out) increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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