Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD
DC Field | Value | Language |
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dc.contributor.author | Son, Ji-Su | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Seo, Yong Gon | - |
dc.contributor.author | Song, Hooyoung | - |
dc.contributor.author | Kim, Ji Hoon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.contributor.author | Kim, Tae-Geun | - |
dc.date.accessioned | 2021-09-07T10:49:56Z | - |
dc.date.available | 2021-09-07T10:49:56Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112024 | - |
dc.description.abstract | The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58 x 10(19) cm(-3) were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O-2) and nitrogen (N-2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | EXTERNAL QUANTUM EFFICIENCY | - |
dc.subject | EPITAXY | - |
dc.subject | CONDUCTION | - |
dc.subject | MECHANISM | - |
dc.subject | NITRIDE | - |
dc.title | Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae-Geun | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2011.01.061 | - |
dc.identifier.wosid | 000293483800023 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.98 - 102 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 326 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 98 | - |
dc.citation.endPage | 102 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | EXTERNAL QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordAuthor | Activation | - |
dc.subject.keywordAuthor | Ambient | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | a-plane p-type GaN | - |
dc.subject.keywordAuthor | Hole concentration | - |
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