Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD
- Authors
- Son, Ji-Su; Baik, Kwang Hyeon; Seo, Yong Gon; Song, Hooyoung; Kim, Ji Hoon; Hwang, Sung-Min; Kim, Tae-Geun
- Issue Date
- 1-7월-2011
- Publisher
- ELSEVIER
- Keywords
- Activation; Ambient; MOCVD; a-plane p-type GaN; Hole concentration
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.98 - 102
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 326
- Number
- 1
- Start Page
- 98
- End Page
- 102
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112024
- DOI
- 10.1016/j.jcrysgro.2011.01.061
- ISSN
- 0022-0248
- Abstract
- The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58 x 10(19) cm(-3) were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O-2) and nitrogen (N-2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient. (C) 2011 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.