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Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons
- Authors
- Kim, Hong-Yeol; Anderson, Travis; Mastro, Michael A.; Freitas, Jaime A., Jr.; Jang, Soohwan; Hite, Jennifer; Eddy, Charles R., Jr.; Kim, Jihyun
- Issue Date
- 1-Jul-2011
- Publisher
- ELSEVIER
- Keywords
- Photoluminescence; Radiation; Semiconducting Gallium Compounds; High Electron Mobility Transistor
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.62 - 64
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 326
- Number
- 1
- Start Page
- 62
- End Page
- 64
- ISSN
- 0022-0248
- Abstract
- An AlGaN/GaN HEMT was irradiated with 5 MeV protons at a dose up to 2 x 10(15)/cm(2). Photoluminescence spectra measured at 5 K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An I-DS-V-DS measurement showed that the current level was decreased by 43% after proton irradiation, and an I-GS-V-GS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface. Published by Elsevier B.V.
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