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Temperature Increase Due to Joule Heating in a Nanostructured MgO-Based Magnetic Tunnel Junction Over a Wide Current-Pulse Range

Authors
Jeong, BoramLim, Sang Ho
Issue Date
7월-2011
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Temperature Increase; Current-Induced Magnetization Switching; Magnetic Tunnel Junctions; Finite Element Method; Magnetic Random Access Memory
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.6612 - 6615
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
11
Number
7
Start Page
6612
End Page
6615
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/112084
DOI
10.1166/jnn.2011.4479
ISSN
1533-4880
Abstract
The temperature increase due to Joule heating in a nanopillar of a magnetic tunnel junction sandwiched by top and bottom electrodes was calculated by the finite element method. The results for the critical condition for the current-induced magnetization switching measured over a wide current-pulse range were taken from the literature. At long pulse widths, the temperature increase was solely dependent on the magnitude of the critical current density. However, no saturation in the temperature increase occurred for short pulse widths. In this case, the temperature increase additionally depended on the pulse width, so that a broad maximum occurred in the pulse width (or the critical current density) dependence of the temperature increase. The original results for the critical condition were corrected by accounting for the temperature increase and these corrected results, together with the Slonczewski equation, were used to extract an accurate value for the thermal stability factor.
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공과대학 (신소재공학부)
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