Large-Scale Solution-Phase Growth of Cu-Doped ZnO Nanowire Networks
- Authors
- Xu, Chunju; Koo, Tae-Woong; Kim, Byung-Sung; Lee, Jae-Hyun; Hwang, Sung Woo; Whang, Dongmok
- Issue Date
- 7월-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Cu-Doped ZnO Nanowires; Solution Route; Optical and Electrical Properties
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.6062 - 6066
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 7
- Start Page
- 6062
- End Page
- 6066
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112181
- DOI
- 10.1166/jnn.2011.4414
- ISSN
- 1533-4880
- Abstract
- Film-like networks of Cu-doped (0.8-2.5 at.%) ZnO nanowires were successfully synthesized through a facile solution process at a low temperature (<100 degrees C). The pH value of solution plays a key role in controlling the density and quality of the Cu-doped ZnO nanowires and the dopant concentration of ZnO nanowires was controlled by adjusting the Cu2+/Zn2+ concentration ratio during the synthesis. The structural study showed that the as-prepared Cu-doped ZnO nanowires with a narrow diameter range of 20-30 nm were single crystal and grew along [0001] direction. Photoluminescence and electrical conductivity measurements showed that Cu doping can lead to a redshift in bandgap energy and an increase in the resistivity of ZnO. The thermal annealing of the as-grown nanowires at a low temperature (300 degrees C) decreased the defect-related emission within the visible range and increased the electrical conductivity. The high-quality ZnO nanowire network with controlled doping will enable further application to flexible and transparent electronics.
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