Air-Stable, Hysteresis-Free Organic Complementary Inverters Produced by the Neutral Cluster Beam Deposition Method
- Authors
- An, Min-Jun; Seo, Hoon-Seok; Zhang, Ying; Oh, Jeong-Do; Choi, Jong-Ho
- Issue Date
- 16-6월-2011
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.23, pp.11763 - 11767
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 115
- Number
- 23
- Start Page
- 11763
- End Page
- 11767
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112219
- DOI
- 10.1021/jp202141h
- ISSN
- 1932-7447
- Abstract
- We designed and realized ideal organic complementary metal oxide semiconductor (CMOS) inverters through integration of unipolar p- and n-type organic field-effect transistors (OFETs) produced by the neutral cluster beam deposition (NCBD) method. The two high-performance, top-contact OFETs with multidigitated, long channel-width geometry were based upon hole-transporting pentacene and electron-transporting N,N'-ditridecylperylene-3,4,9,10-tetra-carboxylic diimide (P13) deposited on poly(methyl methacrylate) (PMMA) modified SiO2 substrates. Due to the well-balanced, high hole and electron mobilities of 0.38 and 0.19 cm(2)/(V s), low trap densities, and good coupling between p- and n-type OFETs, the hysteresis-free organic CMOS inverters demonstrated sharp inversions and high gains of similar to 15 in the first and third quadrants of the voltage transfer curves, and long-term operational stability under ambient conditions.
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