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Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode
- Issue Date
- Jun-2011
- Publisher
- OPTICAL SOC KOREA
- Keywords
- Quantum dot laser; Separate confinement hetero structure; InAlAs/AlGaAs
- Citation
- JOURNAL OF THE OPTICAL SOCIETY OF KOREA, v.15, no.2, pp.124 - 127
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE OPTICAL SOCIETY OF KOREA
- Volume
- 15
- Number
- 2
- Start Page
- 124
- End Page
- 127
- ISSN
- 1226-4776
- Abstract
- Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostnicture) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 rim light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0 x 10(11) dots/cm(2), two quantum dot layers were found to be good enough for low threshold, high-power laser applications.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)