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Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode

Authors
Chan, TrevorSon, Sung HunKim, Kyoung ChanKim, Tae Geun
Issue Date
6월-2011
Publisher
OPTICAL SOC KOREA
Keywords
Quantum dot laser; Separate confinement hetero structure; InAlAs/AlGaAs
Citation
JOURNAL OF THE OPTICAL SOCIETY OF KOREA, v.15, no.2, pp.124 - 127
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE OPTICAL SOCIETY OF KOREA
Volume
15
Number
2
Start Page
124
End Page
127
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/112385
DOI
10.3807/JOSK.2011.15.2.124
ISSN
1226-4776
Abstract
Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostnicture) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 rim light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0 x 10(11) dots/cm(2), two quantum dot layers were found to be good enough for low threshold, high-power laser applications.
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