Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing
DC Field | Value | Language |
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dc.contributor.author | Kang, Min Gyu | - |
dc.contributor.author | Cho, Kwang Hwan | - |
dc.contributor.author | Oh, Seung Min | - |
dc.contributor.author | Do, Young Ho | - |
dc.contributor.author | Kang, Chong Yun | - |
dc.contributor.author | Kim, Sangsig | - |
dc.contributor.author | Yoon, Seok Jin | - |
dc.date.accessioned | 2021-09-07T12:45:35Z | - |
dc.date.available | 2021-09-07T12:45:35Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112531 | - |
dc.description.abstract | (Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 degrees C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 degrees C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 degrees C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 mu A/cm(2) below 300 degrees C. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | SYSTEM | - |
dc.subject | RF | - |
dc.subject | PERFORMANCE | - |
dc.subject | CAPACITORS | - |
dc.subject | DEPENDENCE | - |
dc.subject | SOP | - |
dc.subject | DC | - |
dc.title | Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Chong Yun | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.cap.2010.12.029 | - |
dc.identifier.wosid | 000296605000012 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.11, no.3, pp.S66 - S69 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | S66 | - |
dc.citation.endPage | S69 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | RF | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | SOP | - |
dc.subject.keywordPlus | DC | - |
dc.subject.keywordAuthor | BST | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Excimer laser annealing | - |
dc.subject.keywordAuthor | Embedded capacitor | - |
dc.subject.keywordAuthor | System-on-package | - |
dc.subject.keywordAuthor | Sol-gel | - |
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