Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing
- Authors
- Kang, Min Gyu; Cho, Kwang Hwan; Oh, Seung Min; Do, Young Ho; Kang, Chong Yun; Kim, Sangsig; Yoon, Seok Jin
- Issue Date
- 5월-2011
- Publisher
- ELSEVIER
- Keywords
- BST; Thin film; Excimer laser annealing; Embedded capacitor; System-on-package; Sol-gel
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.3, pp.S66 - S69
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 3
- Start Page
- S66
- End Page
- S69
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112531
- DOI
- 10.1016/j.cap.2010.12.029
- ISSN
- 1567-1739
- Abstract
- (Ba,Sr)TiO3 (BST) thin film with a perovskite structure has a potential for the practical applications in various functional devices. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below 700 degrees C. For the purpose of integrating BST thin film directly into system-on-package (SoP), it is necessary to process the BST film below 350 degrees C. The electrical properties of low-temperature crystallized BST film were studied in this paper. The BST thin films have been crystallized at 300 degrees C by excimer laser annealing (ELA). The BST films were exhibited in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss and low leakage current density. As a result, we demonstrated crystallized BST thin film which has permittivity of 143, dielectric loss of 0.028 and leakage current density of 0.9 mu A/cm(2) below 300 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
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Collections - Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles
- College of Engineering > School of Electrical Engineering > 1. Journal Articles
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