Tunable polarization of spin polarized current by magnetic field
- Authors
- Joo, Sungjung; Lee, Jinseo; Kim, Taeyueb; Rhie, Kungwon; Hong, Jinki; Shin, Kyung-Ho; Kim, Ki Hyun
- Issue Date
- 5월-2011
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Spin polarization; Spin-flip; g-factor; Zeeman; HgCdTe
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.3, pp.568 - 572
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 3
- Start Page
- 568
- End Page
- 572
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112543
- DOI
- 10.1016/j.cap.2010.09.018
- ISSN
- 1567-1739
- Abstract
- The spin polarization of a high g-factor bulk semiconductor is theoretically investigated in the presence of a magnetic field parallel to a driving electric field. Calculations have been carried out using the energydependent relaxation time approximation in association with spin-flip scattering. As the magnitude of the magnetic field increases, the spin-polarized current alternates between the spin-up and spin-down states for the low spin-scattering system. This implies that the current polarization can be tuned by controlling the magnetic field strength, suggesting possible applications to spintronic devices. An experimental method for investigating alternative current polarization is also considered. @ 2010 Elsevier B.V. All rights reserved.
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Collections - College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
- College of Health Sciences > School of Health and Environmental Science > 1. Journal Articles
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