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Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N-2, O-2) plasmas

Authors
Ham, Y. -H.Efremov, A.Lee, H. W.Yun, S. J.Min, N. K.Baek, K. -H.Do, L. -M.Kwon, K. -H.
Issue Date
15-4월-2011
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
Ga-ZnO; HBr-based plasma; Etch rate; Etch mechanism
Citation
VACUUM, v.85, no.11, pp.1021 - 1025
Indexed
SCIE
SCOPUS
Journal Title
VACUUM
Volume
85
Number
11
Start Page
1021
End Page
1025
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/112658
DOI
10.1016/j.vacuum.2011.03.009
ISSN
0042-207X
Abstract
We investigated the etch characteristics and mechanisms of Ga-doped ZnO (Ga-ZnO) thin films in HBr/X (X = Ar, He, N-2, O-2) inductively-coupled plasmas. The etch rates of Ga-ZnO thin films were measured as a function of the additive gas fraction in the range of 0-100% for Ar, He, N-2, and O-2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using a combination of the global (zero-dimensional) plasma model and Langmuir probe diagnostics. By comparing the behavior of the etch rate and fluxes of plasma active species, we found that the Ga-ZnO etch process was not limited by ion-surface interaction kinetics and appeared in the reaction rate-limited etch regime. In the HBr/O-2 plasma, the etch kinetics were probably influenced by oxidation of the etched surface. (C) 2011 Elsevier Ltd. All rights reserved.
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