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Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study
- Authors
- Wang, T. X.; Li, Y.; Lee, K. J.; Cho, J. U.; Kim, D. K.; Noh, S. J.; Kim, Y. K.
- Issue Date
- 15-4월-2011
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.109, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 109
- Number
- 8
- ISSN
- 0021-8979
- Abstract
- The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575337]
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