Current-induced magnetization switching of synthetic antiferromagnetic free layer in magnetic tunnel junctions
- Authors
- Lee, Seo-Won; Lee, Kyung-Jin
- Issue Date
- 1-Apr-2011
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.109, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 109
- Number
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112680
- DOI
- 10.1063/1.3562214
- ISSN
- 0021-8979
- Abstract
- Spin transport in a magnetic tunnel junction with a synthetic antiferromagnetic (SAF) free layer is investigated using the drift-diffusion model. Although the diffusive transport is inappropriate for the MgO tunnel barrier, the drift-diffusion model is found to capture the core features of in-plane spin-transfer torque (STT) through the tunnel barrier, and more importantly, it can describe non-negligible STT exerting on two ferromagnets in a SAF-free layer. STT in a SAF-free layer substantially changes the magnetization dynamics and induces a shift of the critical switching current. STT in a SAF-free layer suppresses current-induced parallel-to-antiparallel switching, whereas it encourages antiparallel-to-parallel switching. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562214]
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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