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Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer
- Authors
- Leiner, J.; Tivakornsasithorn, K.; Liu, X.; Furdyna, J. K.; Dobrowolska, M.; Kirby, B. J.; Lee, H.; Yoo, T.; Lee, Sanghoon
- Issue Date
- 1-4월-2011
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.109, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 109
- Number
- 7
- ISSN
- 0021-8979
- Abstract
- Interlayer exchange coupling (IEC) between two Ga0.95Mn0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3536669]
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