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Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode
- Authors
- Jeong, Hwan Hee; Lee, Sang Youl; Bae, Jung-Hyeok; Choi, Kwang Ki; Song, June-O; Son, Sung Jin; Lee, Yong-Hyun; Seong, Tae-Yeon
- Issue Date
- 1-4월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Electrostatic discharge (ESD) protection; gallium nitride; vertical light-emitting diodes (LEDs)
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, v.23, no.7, pp.423 - 425
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE PHOTONICS TECHNOLOGY LETTERS
- Volume
- 23
- Number
- 7
- Start Page
- 423
- End Page
- 425
- ISSN
- 1041-1135
- Abstract
- We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of similar to 90% at reverse voltages of 2-4 kV.
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