Magnetic Anisotropy of GaMnAs Film and Its Application in Multi-valued Memory Devices
- Authors
- Lee, Sanghoon; Yoo, Taehee; Lee, Hakjoon; Khym, Sungwon; Liu, Xinyu; Furdyna, Jacek K.
- Issue Date
- 4월-2011
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 50
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112748
- DOI
- 10.1143/JJAP.50.04DM02
- ISSN
- 0021-4922
- Abstract
- The magnetic anisotropy of GaMnAs ferromagnetic semiconductor film was investigated by magneto-transport measurements. Values of cubic and uniaxial anisotropies were obtained by analyzing the angular dependences of Hall effects based on magnetic free energy. The presence of strong cubic anisotropy gave four magnetic easy axes in the film's plane, resulting in two-step switching behavior in field scans of the planar Hall effect. Asymmetric loops containing four resistance plateaus were observed in minor scans of the planar Hall effect owing to the formation of stable multi-domain structures during magnetization reversal. Four-valued memory function based on the four observed Hall resistance states was demonstrated by using appropriate sequences of magnetic field pulses. (C) 2011 The Japan Society of Applied Physics
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.