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Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells
- Authors
- Ok, Young-Woo; Rohatgi, Ajeet; Kil, Yeon-Ho; Park, Sung-Eun; Kim, Dong-Hwan; Lee, Joon-Sung; Choi, Chel-Jong
- Issue Date
- 3월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Junction; selective chemical etching; Si interstitial; solar cells; transmission electron microscopy (TEM)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.32, no.3, pp.351 - 353
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 32
- Number
- 3
- Start Page
- 351
- End Page
- 353
- ISSN
- 0741-3106
- Abstract
- We investigated 2-D dopant distribution in a POCl3-diffused n(+) emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n(+) emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.
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