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Resistive switching behavior in a Ni-Ag2Se-Ni nanowire
- Authors
- Lee, N. J.; An, B. H.; Koo, A. Y.; Ji, H. M.; Cho, J. W.; Choi, Y. J.; Kim, Y. K.; Kang, C. J.
- Issue Date
- 3월-2011
- Publisher
- SPRINGER
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.102, no.4, pp.897 - 900
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 102
- Number
- 4
- Start Page
- 897
- End Page
- 900
- ISSN
- 0947-8396
- Abstract
- Hysteretic resistive switching behavior in a silver selenide (Ag2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 mu m, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices.
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