Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process
- Authors
- Lee, Jin-Bok; Choi, Chel-Jong; Seong, Tae-Yeon
- Issue Date
- 3월-2011
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Silica nanowires; Nickel silicide; Rapid-thermal-annealing
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.2, pp.199 - 202
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 2
- Start Page
- 199
- End Page
- 202
- ISSN
- 1567-1739
- Abstract
- We report on the growth of NiSi2-catalyzed amorphous SiO2 nanowires by rapid-thermal-annealing of Ni (40 nm)/poly-Si(60 nm)/SiO2(110 nm)/undoped Si substrate structures at 900 degrees C in N-2 ambient. The diameter of the nanowires is dependent on the diameter of the NiSi2 catalyst particles; the former is about 16-45% smaller than the later. Considering the presence of the nanoparticles located at the tip of the nanowires, the growth behavior of the a-SiO2 nanowires is described in terms of the generation of SiO vapor and the VLS mechanism. (C) 2010 Elsevier B. V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.