Highly-integrable K-band power dividers based on digital CMOS technology
- Authors
- Park, Sanggu; Jeong, Jinho; Jeon, Sanggeun
- Issue Date
- 10-2월-2011
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- power divider; digital CMOS process; Wilkinson divider; dummy metal fills
- Citation
- IEICE ELECTRONICS EXPRESS, v.8, no.3, pp.114 - 120
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE ELECTRONICS EXPRESS
- Volume
- 8
- Number
- 3
- Start Page
- 114
- End Page
- 120
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/113077
- DOI
- 10.1587/elex.8.114
- ISSN
- 1349-2543
- Abstract
- In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-mu m digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.
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