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Highly-integrable K-band power dividers based on digital CMOS technology

Authors
Park, SangguJeong, JinhoJeon, Sanggeun
Issue Date
10-2월-2011
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Keywords
power divider; digital CMOS process; Wilkinson divider; dummy metal fills
Citation
IEICE ELECTRONICS EXPRESS, v.8, no.3, pp.114 - 120
Indexed
SCIE
SCOPUS
Journal Title
IEICE ELECTRONICS EXPRESS
Volume
8
Number
3
Start Page
114
End Page
120
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/113077
DOI
10.1587/elex.8.114
ISSN
1349-2543
Abstract
In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-mu m digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.
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공과대학 (전기전자공학부)
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