Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4-NH3 plasma

Authors
Kim, DaehyunLee, SujinKim, ByungwhanKang, Byung JunKim, Donghwan
Issue Date
1월-2011
Publisher
ELSEVIER
Keywords
Silicon nitride; Pulsed; Plasma-enhanced chemical vapor deposition; Reflectance; Model; Room temperature
Citation
CURRENT APPLIED PHYSICS, v.11, no.1, pp.S43 - S46
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
11
Number
1
Start Page
S43
End Page
S46
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/113304
DOI
10.1016/j.cap.2010.11.013
ISSN
1567-1739
Abstract
Using pulsed, plasma-enhanced chemical vapor deposition system, silicon nitride films were deposited from SiH4 and NH3 at room temperature. Duty ratio was controlled in a range of 20-100% incrementally by 20% at radio frequency bias powers of 50, 70, and 90 W. Reflectance was studied as a function of the process parameters mentioned earlier. The impact of duty ratio on the reflectance was prominent at 70 W and this was strongly correlated with a ratio of high ion energy to low ion energy. Interestingly, the reflectance at other powers yielded a strong correlation with high ion energy flux. A comparison study with other film properties revealed that the reflectance decreased with a decrease in film thickness. A neural network model was constructed to predict various effects of diagnostic variables on the reflectance. (C) 2010 Elsevier B. V. All rights reserved.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher KIM, Dong hwan photo

KIM, Dong hwan
공과대학 (신소재공학부)
Read more

Altmetrics

Total Views & Downloads

BROWSE