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Polymorph-Tuned Synthesis of alpha- and beta-Bi2O3 Nanowires and Determination of Their Growth Direction from Polarized Raman Single Nanowire Microscopy

Authors
In, JunehoYoon, IlsunSeo, KwanyongPark, JeungheeChoo, JaebumLee, YonghoonKim, Bongsoo
Issue Date
2011
Publisher
WILEY-V C H VERLAG GMBH
Keywords
bismuth oxide; nanowires; photoluminescence; polarized Raman microscopy; polymorphism
Citation
CHEMISTRY-A EUROPEAN JOURNAL, v.17, no.4, pp.1304 - 1309
Indexed
SCIE
SCOPUS
Journal Title
CHEMISTRY-A EUROPEAN JOURNAL
Volume
17
Number
4
Start Page
1304
End Page
1309
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/114874
DOI
10.1002/chem.201001684
ISSN
0947-6539
Abstract
We report polymorph-tuned synthesis of alpha- and beta-Bi2O3 nanowires and their single nanowire micro-Raman study. The single crystalline Bi2O3 nanowires in different phases (alpha and beta) were selectively synthesized by adjusting the heating temperature of Bi precursor in a vapor transport process. No catalyst was employed. Furthermore, at an identical precursor evaporation temperature, alpha- and beta- phase Bi2O3 nanowires were simultaneously synthesized along the temperature gradient at a substrate. The growth direction of alpha-Bi2O3 nanowires was revealed by polarized Raman single nanowire spectra. For thin beta-Bi2O3 nanowires with a very small diameter, the polarized Raman single nanowire spectrum was strongly influenced by the shape effect.
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