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An electrical switching device controlled by a magnetic field-dependent impact ionization process

Authors
Lee, JinseoJoo, SungjungKim, TaeyuebKim, Ki HyunRhie, KungwonHong, JinkiShin, Kyung-Ho
Issue Date
20-Dec-2010
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.97, no.25
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
97
Number
25
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/115107
DOI
10.1063/1.3532105
ISSN
0003-6951
Abstract
An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532105]
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College of Health Sciences > School of Health and Environmental Science > 1. Journal Articles
College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles

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