An electrical switching device controlled by a magnetic field-dependent impact ionization process
- Authors
- Lee, Jinseo; Joo, Sungjung; Kim, Taeyueb; Kim, Ki Hyun; Rhie, Kungwon; Hong, Jinki; Shin, Kyung-Ho
- Issue Date
- 20-Dec-2010
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.97, no.25
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 97
- Number
- 25
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/115107
- DOI
- 10.1063/1.3532105
- ISSN
- 0003-6951
- Abstract
- An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532105]
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- Appears in
Collections - College of Health Sciences > School of Health and Environmental Science > 1. Journal Articles
- College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
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