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Observation of antiferromagnetic interlayer exchange coupling in a Ga1-xMnxAs/GaAs:Be/Ga1-xMnxAs trilayer structure
- Authors
- Leiner, J.; Lee, H.; Yoo, T.; Lee, Sanghoon; Kirby, B. J.; Tivakornsasithorn, K.; Liu, X.; Furdyna, J. K.; Dobrowolska, M.
- Issue Date
- 16-11월-2010
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.82, no.19
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 82
- Number
- 19
- ISSN
- 2469-9950
- Abstract
- Interlayer exchange coupling (IEC) between two Ga0.95Mn0.05As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.
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