Self-catalytic growth of silicon nanowires on stainless steel
- Authors
- Kim, Myoung-Ha; Park, Yong-Hee; Kim, Ilsoo; Park, Tae-Eon; Sung, Yun-Mo; Choi, Heon-Jin
- Issue Date
- 15-11월-2010
- Publisher
- ELSEVIER
- Keywords
- Nanomaterials; Crystal growth; Semiconductors
- Citation
- MATERIALS LETTERS, v.64, no.21, pp.2306 - 2309
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS LETTERS
- Volume
- 64
- Number
- 21
- Start Page
- 2306
- End Page
- 2309
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/115325
- DOI
- 10.1016/j.matlet.2010.06.024
- ISSN
- 0167-577X
- Abstract
- Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H-2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst. (C) 2010 Elsevier B.V. All rights reserved.
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