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Self-catalytic growth of silicon nanowires on stainless steel

Authors
Kim, Myoung-HaPark, Yong-HeeKim, IlsooPark, Tae-EonSung, Yun-MoChoi, Heon-Jin
Issue Date
15-11월-2010
Publisher
ELSEVIER
Keywords
Nanomaterials; Crystal growth; Semiconductors
Citation
MATERIALS LETTERS, v.64, no.21, pp.2306 - 2309
Indexed
SCIE
SCOPUS
Journal Title
MATERIALS LETTERS
Volume
64
Number
21
Start Page
2306
End Page
2309
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/115325
DOI
10.1016/j.matlet.2010.06.024
ISSN
0167-577X
Abstract
Silicon nanowires were grown on a stainless steel substrate using a vapor-liquid-solid mechanism in self-catalytic mode. The multi-component Fe-Cr-Ni-Mn-Si catalyst that was formed from the substrate leads the growth of single-crystal Si nanowires with lengths of several micrometers and diameters ranging from 100 to 150 nm. A systematic investigation of the processing parameters revealed that the hydrogen flow rate is critical to the growth of the nanowires. At a high flow rate that exceeds 1000 sccm, the substrate is embrittled by H-2, and liquid droplets, which lead the growth of nanowires by the vapor-liquid-solid mechanism, are formed on the substrate. Electrical transport measurements indicated that the nanowires grown with the multi-component catalyst have electrical properties comparable to those grown by a single-component Ti catalyst. (C) 2010 Elsevier B.V. All rights reserved.
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