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Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors
- Authors
- Hong, B. H.; Choi, L.; Jung, Y. C.; Hwang, S. W.; Cho, K. H.; Yeo, K. H.; Kim, D. -W.; Jin, G. Y.; Park, D.; Song, S. H.; Lee, Y. Y.; Son, M. H.; Ahn, D.
- Issue Date
- 11월-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gate all around (GAA); random telegraph noise (RTN); silicon nanowire FET (SNWFET); temperature dependence
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.9, no.6, pp.754 - 758
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 9
- Number
- 6
- Start Page
- 754
- End Page
- 758
- ISSN
- 1536-125X
- Abstract
- We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (Ts) down to 4.2 K. From the T-dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the T-dependence of the scattering coefficient-mobility product extracted from the relative fluctuation amplitude of the drain current are consistent with the fact that the surface roughness scattering is dominant in GAA PMOS SNWFETs.
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