High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
- Authors
- Choi, Chang-Young; Lee, Ji-Hoon; Koh, Jung-Hyuk; Ha, Jae-Geun; Koo, Sang-Mo; Kim, Sangsig
- Issue Date
- 11월-2010
- Publisher
- SPRINGEROPEN
- Keywords
- Field-effect transistors (FETs); Electron mobility; Variation of the current level; Nanoribbon FET
- Citation
- NANOSCALE RESEARCH LETTERS, v.5, no.11, pp.1795 - 1799
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 5
- Number
- 11
- Start Page
- 1795
- End Page
- 1799
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/115479
- DOI
- 10.1007/s11671-010-9714-y
- ISSN
- 1931-7573
- Abstract
- We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150A degrees C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 x 10(-6)).
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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