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Development of a hybrid inverter through integration of organic and inorganic thin film transistors

Authors
Park, Jung-HoKwon, Jae-HongChang, SeongpilSeo, HanChoi, Byung-HyunJi, Mi-JungChoi, JinnilPak, James JunghoJu, Byeong-Kwon
Issue Date
1-9월-2010
Publisher
ELSEVIER SCIENCE SA
Keywords
Thin film transistor; Inverter; Hybrid; ZnO; Pentacene
Citation
THIN SOLID FILMS, v.518, no.22, pp.6264 - 6267
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
518
Number
22
Start Page
6264
End Page
6267
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/115702
DOI
10.1016/j.tsf.2010.03.141
ISSN
0040-6090
Abstract
In this paper, complementary thin-film transistor (TFT) inverter is fabricated with organic-inorganic hybrid channels. By adopting p-channel pentacene and n-channel ZnO, we have fabricated a device of hybrid complementary TFT inverter by using same electrode in organic-inorganic hybrid channels. To be accomplished Ohmic-contact in organic-inorganic hybrid channels, we adapted to n-channel staggered TFT and p-channel coplanar TFT. In results, a hybrid inverter built through integration of organic and inorganic TFT shows that the typical inverter response to stage switching is clearly observed between 0 and 40 V. for both input directions, displaying a high voltage gain (dV(OUT)/dV(IN))>16. (c) 2010 Elsevier B.V. All rights reserved.
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공과대학 (전기전자공학부)
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