Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers
- Authors
- Chung, Sunjae; Lee, Sanghoon; Chung, J. -H.; Yoo, Taehee; Lee, Hakjoon; Kirby, B.; Liu, X.; Furdyna, J. K.
- Issue Date
- 13-8월-2010
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.82, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 82
- Number
- 5
- ISSN
- 2469-9950
- Abstract
- We report the observation of the giant magnetoresistance effect in semiconductor-based GaMnAs/GaAs:Be multilayers. Clear transitions between low-field-high-resistance and high-field-low-resistance states are observed in selected samples with Be-doped nonmagnetic spacers. These samples also show negative coercive fields in their magnetic hysteresis and antiferromagnetic (AFM) splittings in polarized neutron reflectivity. Our data indicate that the AFM interlayer exchange couplings in this system occur over much longer periods than predicted by current theories, strongly suggesting that the coupling in III-V semiconductor-based magnetic multilayers is significantly longer ranged than in metallic systems.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.