Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors
- Authors
- Yun, Junggwon; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 11-6월-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.21, no.23
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 21
- Number
- 23
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116247
- DOI
- 10.1088/0957-4484/21/23/235204
- ISSN
- 0957-4484
- Abstract
- Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) films and n-channel HgSe-NC films were constructed on back-gate patterned plastic substrates. The NAND gate was made of two HgTe-p-channel thin film transistors (TFTs) in parallel and two HgSe-n-channel TFTs in series. The NOR gate was built up with both two HgSe-n-channel TFTs in parallel and two HgTe-p-channel TFTs in series. The mobility and on/off ratio for the p-channel TFTs were estimated to be 0.9 cm(2) V-1 s(-1) and 10, respectively, and those for the n-channel TFTs were measured to be 1.8 cm(2) V-1 s(-1) and 10(2), respectively. The NAND and NOR gates were operated with gains of 1.45 and 1.63 and transition widths of 7.8 and 6.2 V, respectively, at room temperature in air. In addition, the operations of the NAND and NOR logics are reproducible for up to 1000 strain cycles.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.