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Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors

Authors
Yun, JunggwonCho, KyoungahKim, Sangsig
Issue Date
11-6월-2010
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.21, no.23
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
21
Number
23
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/116247
DOI
10.1088/0957-4484/21/23/235204
ISSN
0957-4484
Abstract
Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) films and n-channel HgSe-NC films were constructed on back-gate patterned plastic substrates. The NAND gate was made of two HgTe-p-channel thin film transistors (TFTs) in parallel and two HgSe-n-channel TFTs in series. The NOR gate was built up with both two HgSe-n-channel TFTs in parallel and two HgTe-p-channel TFTs in series. The mobility and on/off ratio for the p-channel TFTs were estimated to be 0.9 cm(2) V-1 s(-1) and 10, respectively, and those for the n-channel TFTs were measured to be 1.8 cm(2) V-1 s(-1) and 10(2), respectively. The NAND and NOR gates were operated with gains of 1.45 and 1.63 and transition widths of 7.8 and 6.2 V, respectively, at room temperature in air. In addition, the operations of the NAND and NOR logics are reproducible for up to 1000 strain cycles.
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공과대학 (전기전자공학부)
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