Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors
DC Field | Value | Language |
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dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Seo, Yujeong | - |
dc.contributor.author | Zhang, Yongjie | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-08T02:48:08Z | - |
dc.date.available | 2021-09-08T02:48:08Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-06 | - |
dc.identifier.issn | 1530-4388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116356 | - |
dc.description.abstract | We report the effect of hydrogen annealing on the gate-leakage-current and switching characteristics of metal-alumina-nitride-oxide-silicon (MANOS) capacitors by analyzing their negative-/positive-bias instability (NBI/PBI). One sample, namely, A, is annealed with rapid thermal annealing (RTA), and the other sample, namely, B, is first annealed with RTA and then further annealed in a furnace, using a N-2-H-2 (98% nitrogen and 2% hydrogen) gas mixture. In the NBI/PBI experiments, the flatband voltage shift Delta V-FB is observed to be smaller, i.e., the gate-leakage-current density is reduced for sample B at gate voltages less than +/- 3 V, a domain where trap-assisted tunneling is dominant. However, Delta V-FB increases rapidly for the same sample at gate voltages larger than +/- 6 V, a domain where the modified Fowler-Nordheim tunneling (MFNT) is dominant, which indicates faster program-and-erase characteristics. These results show that additional hydrogen annealing can improve both device reliability and switching characteristics of the MANOS-type memory by reducing interface traps between the silicon substrate and silicon oxide layers, as well as turn-on voltages for MFNT. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TEMPERATURE INSTABILITY | - |
dc.subject | PASSIVATION | - |
dc.subject | TRANSISTORS | - |
dc.subject | DEVICE | - |
dc.subject | CHARGE | - |
dc.subject | NBTI | - |
dc.title | Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/TDMR.2009.2036248 | - |
dc.identifier.scopusid | 2-s2.0-77953284142 | - |
dc.identifier.wosid | 000278539400016 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.10, no.2, pp.295 - 300 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - |
dc.citation.title | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 295 | - |
dc.citation.endPage | 300 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TEMPERATURE INSTABILITY | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | CHARGE | - |
dc.subject.keywordPlus | NBTI | - |
dc.subject.keywordAuthor | Flash memory | - |
dc.subject.keywordAuthor | metal-alumina-nitride-oxide-silicon (MANOS) | - |
dc.subject.keywordAuthor | negative-bias (NB) temperature instabilities (NBTIs) | - |
dc.subject.keywordAuthor | passivation effect | - |
dc.subject.keywordAuthor | positive-bias (PB) temperature instabilities (PBTIs) | - |
dc.subject.keywordAuthor | postannealing | - |
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