Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors
- Authors
- Kim, Hee-Dong; An, Ho-Myoung; Seo, Yujeong; Zhang, Yongjie; Kim, Tae Geun
- Issue Date
- 6월-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Flash memory; metal-alumina-nitride-oxide-silicon (MANOS); negative-bias (NB) temperature instabilities (NBTIs); passivation effect; positive-bias (PB) temperature instabilities (PBTIs); postannealing
- Citation
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.10, no.2, pp.295 - 300
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Volume
- 10
- Number
- 2
- Start Page
- 295
- End Page
- 300
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116356
- DOI
- 10.1109/TDMR.2009.2036248
- ISSN
- 1530-4388
- Abstract
- We report the effect of hydrogen annealing on the gate-leakage-current and switching characteristics of metal-alumina-nitride-oxide-silicon (MANOS) capacitors by analyzing their negative-/positive-bias instability (NBI/PBI). One sample, namely, A, is annealed with rapid thermal annealing (RTA), and the other sample, namely, B, is first annealed with RTA and then further annealed in a furnace, using a N-2-H-2 (98% nitrogen and 2% hydrogen) gas mixture. In the NBI/PBI experiments, the flatband voltage shift Delta V-FB is observed to be smaller, i.e., the gate-leakage-current density is reduced for sample B at gate voltages less than +/- 3 V, a domain where trap-assisted tunneling is dominant. However, Delta V-FB increases rapidly for the same sample at gate voltages larger than +/- 6 V, a domain where the modified Fowler-Nordheim tunneling (MFNT) is dominant, which indicates faster program-and-erase characteristics. These results show that additional hydrogen annealing can improve both device reliability and switching characteristics of the MANOS-type memory by reducing interface traps between the silicon substrate and silicon oxide layers, as well as turn-on voltages for MFNT.
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