Asymmetry in the reorientation process of magnetization for crossing the [1(1)over-bar0] and the [110] directions in Ga1-xMnxAs epilayers

Abstract

The magnetization reversal processes of ferromagnetic Ga1-xMnxAs films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 (1) over bar0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnxAs film. (C) 2010 American Institute of Physics. [doi:10.1063/1.3352977]