P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al2O3 gate layers
DC Field | Value | Language |
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dc.contributor.author | Yoon, Changjoon | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Lee, Jae-Hyun | - |
dc.contributor.author | Whang, Dongmok | - |
dc.contributor.author | Moon, Byung-Moo | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-08T03:20:47Z | - |
dc.date.available | 2021-09-08T03:20:47Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.issn | 1293-2558 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116484 | - |
dc.description.abstract | P-type Si nanowire (NW)-based nano-floating gate memory (NFGM) with Au nanoparticles (NPs) embedded in Al2O3 gate layers is characterized in this study. The electrical characteristics of a representative p-type Si NW-based NFGM exhibit a counterclockwise hysteresis loop indicating the trapping and detrapping of electrons in the Au NP nodes of the NFGM device. The threshold voltage shift of the device is 5.4 V and the device has good retention over a lapse of time of 5 x 10(4) s. On the other hand, the p-type Si NW-based top-gate device without any Au NPs does not exhibit any significant threshold voltage shift. This observation reveals that the memory behavior of the p-type Si NW-based NFGM is due to the trapping and detrapping of charge carriers in the Au NPs. (C) 2010 Elsevier Masson SAS. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | METAL NANOCRYSTAL MEMORIES | - |
dc.subject | ELECTRICAL CHARACTERISTICS | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | MOS CAPACITORS | - |
dc.subject | DEVICE | - |
dc.subject | FABRICATION | - |
dc.subject | TRANSPORT | - |
dc.title | P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al2O3 gate layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Kyoungah | - |
dc.contributor.affiliatedAuthor | Moon, Byung-Moo | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.solidstatesciences.2010.02.026 | - |
dc.identifier.scopusid | 2-s2.0-77951137632 | - |
dc.identifier.wosid | 000279125700017 | - |
dc.identifier.bibliographicCitation | SOLID STATE SCIENCES, v.12, no.5, pp.745 - 749 | - |
dc.relation.isPartOf | SOLID STATE SCIENCES | - |
dc.citation.title | SOLID STATE SCIENCES | - |
dc.citation.volume | 12 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 745 | - |
dc.citation.endPage | 749 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Inorganic & Nuclear | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | METAL NANOCRYSTAL MEMORIES | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | MOS CAPACITORS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Nanowire | - |
dc.subject.keywordAuthor | Nanoparticle | - |
dc.subject.keywordAuthor | Memory | - |
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