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ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect
- Authors
- Kim, Joondong; Yun, Ju-Hyung; Kim, Chang Hyun; Park, Yun Chang; Woo, Ju Yeon; Park, Jeunghee; Lee, Jung-Ho; Yi, Junsin; Han, Chang-Soo
- Issue Date
- 19-3월-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.21, no.11
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 21
- Number
- 11
- ISSN
- 0957-4484
- Abstract
- A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.
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